| PART |
Description |
Maker |
| HYMP112U64CR8-C4 HYMP125U64CR8-C4 HYMP112U64CR8-S5 |
240pin DDR2 SDRAM Unbuffered DIMMs
64M X 64 DDR DRAM MODULE, 0.4 ns, ZMA240 ROHS COMPLIANT, DIMM-240
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA240 ROHS COMPLIANT, DIMM-240
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.5 ns, ZMA240 ROHS COMPLIANT, DIMM-240
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.45 ns, ZMA240 ROHS COMPLIANT, DIMM-240
|
http://
Hynix Semiconductor, Inc.
|
| MT8VDDT3232UG-75XX MT8VDDT12832UY-75XX MT8VDDT6432 |
32M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 DIMM-100
128M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 LEAD FREE, DIMM-100
64M X 32 DDR DRAM MODULE, 0.75 ns, DMA100
|
Lattice Semiconductor, Corp.
|
| W3EG72125S202AJD3MG |
128M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
|
MICROSEMI CORP-PMG MICROELECTRONICS
|
| HYS72T128001HFN-3.7-A |
128M X 72 DDR DRAM MODULE, DMA240
|
INFINEON TECHNOLOGIES AG
|
| HYS72T128000EP-25F-B2 |
128M X 72 DDR DRAM MODULE, DMA240
|
QIMONDA AG
|
| HYS72D128300GBR-7-B |
128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
INFINEON TECHNOLOGIES AG
|
| HMP125S6EFR8C-C4 HMP125S6EFR8C-S5 HMP125S6EFR8C-S6 |
256M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
200pin Unbuffered DDR2 SDRAM SO-DIMMs
|
HYNIX SEMICONDUCTOR INC
Hynix Semiconductor, Inc.
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYS72D256220GBR-7-B HYS72D256320GBR-7-B HYS72D1283 |
184 - Pin Registered Double-Data-Rate SDRAM Module 128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
|
Qimonda AG
|
| M392T2863QZA-CF7 |
128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
|
Samsung Semiconductor Co., Ltd.
|
|
